FEOL ETCH CLUSTER

Imec EU Pilot line NV procured a 300mm dry etch platform from Tokyo Electron Europe Limited, featuring a conductor dry etch process module with ICP RF source power and dual bottom bias capability (RF Bias + DC Pulse Bias at 400kHz) for FEOL applications at N2 technology node and beyond, particularly CFET applications including nanosheet etch, full gate etch, and source/drain recess. The platform includes at least 6 process module slots for capacity and functionality upgrades and a minimum of 5 load ports. The award was completed on 16 July 2026.