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Contract signedUnited Kingdom

GaN HEMT semiconductor etching

Published
Published 19 February 2026

Overview

The project aims to create full microelectronics manufacturing on Gallium Nitride (GaN) integrated circuits

Key details

Country
United Kingdom
Status
Contract signed
Procedure
Direct
Published
19 February 2026

Award outcome

Awarded value
£39,400
Award date
3 February 2026
Winner
  • Swansea University

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Notice history

Every published notice in this contracting process, newest first.

  1. Contract

    19 February 2026

    View notice ↗

Contracting authority

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Awarded: GaN HEMT semiconductor etching — won by Swansea University — Skim